Title :
Examination of theTransient Drift-Diffusion and Hydrodynamic Modeling Accuracy for SiGe HBTs by 2D Monte-Carlo Device Simulation
Author :
Neinhüs, B. ; Graf, P. ; Decker, S. ; Meinerzhagen, B.
Author_Institution :
University of Bremen, Germany
fDate :
22-24 September 1997
Keywords :
Electrons; Germanium silicon alloys; Heterojunction bipolar transistors; High definition video; Hydrodynamics; Integrated circuit modeling; Numerical models; Semiconductor process modeling; Silicon germanium; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194397
