• DocumentCode
    1908649
  • Title

    Examination of theTransient Drift-Diffusion and Hydrodynamic Modeling Accuracy for SiGe HBTs by 2D Monte-Carlo Device Simulation

  • Author

    Neinhüs, B. ; Graf, P. ; Decker, S. ; Meinerzhagen, B.

  • Author_Institution
    University of Bremen, Germany
  • fYear
    1997
  • fDate
    22-24 September 1997
  • Firstpage
    188
  • Lastpage
    191
  • Keywords
    Electrons; Germanium silicon alloys; Heterojunction bipolar transistors; High definition video; Hydrodynamics; Integrated circuit modeling; Numerical models; Semiconductor process modeling; Silicon germanium; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194397
  • Filename
    1503327
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1908649