Title :
Magnetic field dependence of electron energy states in 3D nano-scopic quantum rings
Author :
Li, Yiming ; Voskoboynikov, O. ; Lee, C.P. ; Shih, Cheng Feng ; Sze, S.M. ; Tretyak, O.
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
Abstract :
We study theoretically the electron energy states for realistic models in 3D nano-scopic semiconductor quantum rings. The effective one-band Hamiltonian approximation and the Ben Daniel-Duke boundary conditions are considered simultaneously in the model formulation. The proposed model problem is solved numerically by using central difference scheme with non-uniform meshing technique, shifted and balanced QR algorithm, and inverse iteration method. It is found that calculation results strongly depend on the radial cross shapes of InAs/GaAs quantum rings. The dependence of energy states on an external magnetic field for 3D nano-scopic quantum ring indicates there is a significant difference among those reported results with simplified 1D or 2D approaches in literature. Simulation results demonstrate very good consistence with the experimental data
Keywords :
III-V semiconductors; finite difference methods; gallium arsenide; indium compounds; iterative methods; mesoscopic systems; 3D nanoscopic semiconductor quantum ring; Ben Daniel-Duke boundary conditions; InAs-GaAs; QR algorithm; central difference method; computer simulation; effective one-band Hamiltonian approximation; electron energy states; inverse iteration; magnetic field dependence; nonuniform meshing technique; numerical model; Boundary conditions; Electrons; Energy states; Fabrication; Gallium arsenide; Iterative methods; Magnetic fields; Quantum dots; Quantum mechanics; Schrodinger equation;
Conference_Titel :
Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-7215-8
DOI :
10.1109/NANO.2001.966384
