Monolithic 14 GHz wideband InP HBT BPSK modulator

Author

Desrosiers, R. ; Cowles, J. ; Hornbuckle, C. ; Gutierrez-Aitken, A. ; Becker, J.

Author_Institution

TRW Electron. & Technol. Div., Redondo Beach, CA, USA

fYear

1998

fDate

1-4 Nov. 1998

Firstpage

135

Lastpage

138

Abstract

This paper presents the first reported monolithic InP HBT BPSK modulator capable of >3 Gsps data rates on a 14 GHz carrier. The MMIC, consisting of a digital modulation driver and a diode mixer, was fabricated using TRW´s 75 GHz f/sub t/ InP HBT MMIC process. The use of InP based devices for the mixer and driver circuits results in a 2/spl times/ decrease in power consumption compared with equivalent GaAs HBT circuits. The successful integration of traditional microwave and digital circuits demonstrates the versatility of InP HBTs as a high frequency, low power mixed-mode technology.

Keywords

III-V semiconductors; bipolar MMIC; heterojunction bipolar transistors; indium compounds; low-power electronics; mixed analogue-digital integrated circuits; modulators; phase shift keying; 14 GHz; HBT BPSK modulator; InP; MMIC; TRW; data rates; digital modulation driver; diode mixer; driver circuits; low power mixed-mode technology; power consumption; Binary phase shift keying; Digital modulation; Diodes; Driver circuits; Energy consumption; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; MMICs; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual

Conference_Location

Atlanta, GA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5049-9

Type

conf

DOI

10.1109/GAAS.1998.722648

Filename

722648