• DocumentCode
    1908728
  • Title

    An analytical model for GAA transistors

  • Author

    Terao, A. ; van de Wiele, F.

  • Author_Institution
    Université Catholique de Louvain, Laboratoire de Microélectronique, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium; Senior Research Assistant of the National Fund for Scientific Research, Belgium
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    233
  • Lastpage
    236
  • Abstract
    The GAA transistor is a new SOI device with a symmetrical double-gate structure. We have developped an analytical model to describe the volume inversion occuring in this device. The model is used to characterize the mobility of the carriers both at the surface and in the volume of the SOI film.
  • Keywords
    Analytical models; Conductive films; Impurities; Lead compounds; Microelectronics; Poisson equations; Semiconductor films; Silicon on insulator technology; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435333
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1908728