Title :
Application of a Linear Scaling Factor for Modeling I-V-Characteristics of Submicron MOSFETs with Channel Lengths down to 0.4 μm
Author :
Wildau, H.-J. ; Scheidemantel ; Wagemann, H.G.
Author_Institution :
Institut fÿr Werkstoffe der Elektrotechnik der Technischen Universitÿt Berlin, JebensstraÃ\x9fe 1, Sekr. J10, D-1000 Berlin 12, Germany
Abstract :
A simple method for predicting the I-V-characteristics of short-channel devices employing a linear scaling factor is described. To confirm the results of this method, measurements were taken of CMOS-transistors with channel lengths down to 0.4 μm, fabricated entirely by means of X-ray lithography.
Keywords :
Computational modeling; Data mining; Doping; Length measurement; MOSFETs; Mathematical model; Microelectronics; Predictive models; X-ray lithography; X-ray scattering;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
