DocumentCode :
1908778
Title :
Impact of non-equilibrium transport and series resistances in 0.1um bulk and SOI MOSFETs
Author :
Bricout, Paul Henri ; Augendre, Emmanuel ; Dubois, Emmanuel
Author_Institution :
Inst. Superieur d´´Electronique Nord, France
fYear :
1997
fDate :
22-24 September 1997
Firstpage :
204
Lastpage :
207
Keywords :
Computational modeling; Degradation; MOSFETs; Monte Carlo methods; Optical films; Predictive models; Scattering; Thin film devices; Thin film transistors; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194401
Filename :
1503331
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1908778
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