DocumentCode
1908790
Title
Low temperature growth of carbon nanotube emitters on silicon substrates and ITO glass
Author
Chen, S.P. ; Chuang, C.C. ; Cheng, K.W. ; Huang, T.W. ; Huang, J.H. ; Hsiao, C.S. ; Kuo, J.C.
Author_Institution
Innovative Energy Technol. Div., Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear
2003
fDate
7-11 July 2003
Firstpage
145
Lastpage
146
Abstract
In this study, the carbon nanotube emitters have been successfully synthesized over two dimensional Ni-patterned silicon substrates and ITO coated glass. We used the microwave plasma enhanced chemical vapor deposition (MPECVD) process to fabricate the carbon nanotube emitters.
Keywords
carbon nanotubes; field emission; nanotube devices; plasma CVD; C; ITO; ITO coated glass substrates; InSnO; Si; carbon nanotube emitters; low temperature growth; microwave PECVD; microwave plasma enhanced chemical vapor deposition; silicon substrates; Carbon nanotubes; Chemical vapor deposition; Current density; Glass; Indium tin oxide; Plasma applications; Plasma temperature; Semiconductor films; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location
Osaka, Japan
Print_ISBN
4-8181-9515-4
Type
conf
DOI
10.1109/IVMC.2003.1223025
Filename
1223025
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