• DocumentCode
    1908804
  • Title

    Monte Carlo study on electron transport properties in double-gate fully depleted SOI-MOSFETs

  • Author

    Gámiz, F. ; Roldán, J.B. ; López-Villanueva, J.A. ; Carceller, J.E.

  • Author_Institution
    Universidad de Granada, Spain
  • fYear
    1997
  • fDate
    22-24 September 1997
  • Firstpage
    208
  • Lastpage
    211
  • Keywords
    Acoustic scattering; Carrier confinement; Electron mobility; MOSFETs; Monte Carlo methods; Phonons; Rough surfaces; Semiconductor films; Silicon on insulator technology; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194402
  • Filename
    1503332
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1908804