Title :
High-voltage HBT technology
Author_Institution :
TriQuint Semicond. Inc., Richardson, TX, USA
Abstract :
This paper describes the status of HBT technology for applications at 12 V and above. Design and process considerations for fabrication of HBTs with high breakdown voltage are discussed, along with a general approach for reduced thermal resistance. Current understanding of high-voltage HBT reliability and market outlook are reviewed.
Keywords :
heterojunction bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device breakdown; semiconductor device reliability; thermal resistance; 12 V; 70 V; HV HBT reliability; fabrication; high breakdown voltage; high-voltage HBT technology; thermal resistance reduction; Breakdown voltage; Doping; FETs; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; P-n junctions; Silicon on insulator technology; Solid state circuits; Substrates;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-5049-9
DOI :
10.1109/GAAS.1998.722652
