Avoiding plasma induced damage to gate oxide with conductive top film (CTF) on PECVD contact etch stop layer

Author

Seung-Chul Song ; Filipiak, S. ; Perera, A. ; Turner, Mark ; Huang, F. ; Anderson, S.G.H. ; Laegu Kang ; Byoung Min ; Menke, D. ; Tukunang, S. ; Venkatesan, S.

Author_Institution

DigitaIDNA Lab., Motorola Inc., Austin, TX, USA

fYear

2002

fDate

11-13 June 2002

Firstpage

72

Lastpage

73

Abstract

Significantly reduced plasma damage is demonstrated by including a thin conductive top film (CTF) on the contact etch stop layer (ESL) for the first time, which effectively blocks radiation generated by subsequent high density plasma processes. We also show that plasma damage exacerbates negative bias temperature instability (NBTI) in PMOSFETs and can be effectively suppressed by the CTF process.

Keywords

CMOS integrated circuits; MOSFET; dielectric thin films; electrical contacts; integrated circuit interconnections; integrated circuit manufacture; plasma CVD; plasma density; protective coatings; thermal stability; CTF process; PECVD contact etch stop layer; PMOSFET; SiO/sub 2/; conductive top film; gate oxide; high density plasma process radiation blocking; negative bias temperature instability; plasma damage; plasma induced damage reduction; Conductive films; Etching; Niobium compounds; Plasma applications; Plasma chemistry; Plasma density; Plasma devices; Plasma materials processing; Plasma temperature; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-7312-X

Type

conf

DOI

10.1109/VLSIT.2002.1015393

Filename

1015393