• DocumentCode
    1908864
  • Title

    SiGe gate for highly performant 0.15/0.18um CMOS technology

  • Author

    Skotnicki, T. ; Bouillon, P. ; Gwoziecki, R. ; Halimaoui, A. ; Mourrain, C. ; Sagnes, I. ; Regolini, J.L. ; Jouber, O. ; Paoli, M. ; Schiavone, P.

  • Author_Institution
    France Telecom - CNET
  • fYear
    1997
  • fDate
    22-24 September 1997
  • Firstpage
    216
  • Lastpage
    219
  • Keywords
    CMOS technology; Capacitance-voltage characteristics; Doping; Germanium silicon alloys; Implants; MOS devices; MOSFET circuits; Silicon germanium; Telecommunications; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194404
  • Filename
    1503334
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1908864