DocumentCode :
1908864
Title :
SiGe gate for highly performant 0.15/0.18um CMOS technology
Author :
Skotnicki, T. ; Bouillon, P. ; Gwoziecki, R. ; Halimaoui, A. ; Mourrain, C. ; Sagnes, I. ; Regolini, J.L. ; Jouber, O. ; Paoli, M. ; Schiavone, P.
Author_Institution :
France Telecom - CNET
fYear :
1997
fDate :
22-24 September 1997
Firstpage :
216
Lastpage :
219
Keywords :
CMOS technology; Capacitance-voltage characteristics; Doping; Germanium silicon alloys; Implants; MOS devices; MOSFET circuits; Silicon germanium; Telecommunications; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194404
Filename :
1503334
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1908864
