Worst-Case Simulation Using Principal Component Analysis Techniques: An Investigation

Unavoidable statistical perturbations inherent in any IC manufacturing process lead to variations in MOSFET device parameters. Circuit performances, being sensitive to these model parameters, also exhibit statistical spreads. A new methodology by which circuit designers can accurately predict circuit worst-case performance limits prior to circuit fabrication is presented. Measured device parameter spreads, parameter correlations, principal component analysis techniques, and gradient analysis information have been utilised.