Two-dimensional analytical potential distribution model for GaN MESFET

Author

Ahmed, Tanvir ; Khan, Md Tanjib Atique ; Islam, M.S.

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2012

fDate

15-16 March 2012

Firstpage

226

Lastpage

229

Abstract

A two-dimensional (2D) analytical model is derived in this paper to predict the channel potential of MESFET. The model is based on two-dimensional analytical solution of Poisson´s equation with suitable boundary conditions. The analytical result is obtained and verified for GaN MESFET. The result of analytical model is almost similar to the simulation result obtained by Comsol Multiphysics. The variation of channel potential with respect to gate to source voltage, drain to source voltage and channel length is also shown. This model can be used for further device characterization and optimization.

Keywords

II-VI semiconductors; Poisson equation; Schottky gate field effect transistors; gallium compounds; semiconductor device models; wide band gap semiconductors; GaN; GaN MESFET; Poisson equation; boundary condition; channel length; channel potential; drain-to-source voltage; gate-to-source voltage; two-dimensional analytical potential distribution; Logic gates; MESFETs; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICDCS), 2012 International Conference on

Conference_Location

Coimbatore

Print_ISBN

978-1-4577-1545-7

Type

conf

DOI

10.1109/ICDCSyst.2012.6188710

Filename

6188710