High performance InP-based phototransistors for long wavelength, HBT-based optical receivers

Author

Frimel, S.M. ; Roenker, K.P. ; Stanchina, W.E. ; Sun, H.C.

Author_Institution

Dept. of Electr. & Comput. Eng. & Comput. Sci., Cincinnati Univ., OH, USA

fYear

1998

fDate

1-4 Nov. 1998

Firstpage

161

Lastpage

164

Abstract

The performance of InAlAs/InGaAs heterojunction bipolar phototransistors (HBTs) has been studied in order to develop improved photodetectors for use in long wavelength optical receivers based on heterojunction bipolar transistors (HBTs). This paper presents experimental results for devices operated with a base bias and with frontside optical injection through the emitter demonstrating the device´s high optical gain (30) and high frequency performance capabilities (f/sub r/=50 GHz). The results demonstrate that the HBT is an attractive alternative to the PIN photodetector for use in HBT-based optical receivers.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; optical receivers; phototransistors; 50 GHz; HBT-based optical receivers; InAlAs-InGaAs; base bias; frequency performance; frontside optical injection; optical gain; phototransistors; Frequency; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Optical devices; Optical receivers; Performance gain; Photodetectors; Phototransistors; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual

Conference_Location

Atlanta, GA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5049-9

Type

conf

DOI

10.1109/GAAS.1998.722658

Filename

722658