Title :
Realisation of a 0.1 um vertical MOSFET with a SiGe source
Author :
Hall, S. ; Wu, Z.Y.
Author_Institution :
University of Liverpool, United Kingdom
fDate :
22-24 September 1997
Keywords :
Epitaxial growth; Etching; Germanium silicon alloys; MOSFET circuits; Molecular beam epitaxial growth; Oxidation; Plasma applications; Plasma sources; Plasma temperature; Silicon germanium;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194407
