DocumentCode
1908999
Title
Manufacturability of 3D-Epitaxial-Lateral-Overgrowth CMOS Circuits with Three Stacked Channels
Author
Roos, Gerhard ; Hoefflinger, Bernd ; Schubert, Martin ; Zingg, René
Author_Institution
Institute for Microelectronics Stuttgart, IMS, Allmandring 30a, D-7000 Stuttgart 80, Germany
fYear
1991
fDate
16-19 Sept. 1991
Firstpage
191
Lastpage
194
Abstract
Epitaxial lateral overgrowth of Si over oxide has been perfected to yield dual-gate transistor stacks with three stacked channels providing high and matched transconductances. Threshold voltage with standard deviation ranging from 50mV to 110mV allow complex 3D logic circuits like parallel multipliers.
Keywords
Epitaxial growth; Logic circuits; MOS devices; MOSFETs; Manufacturing; Microelectronics; Plasma chemistry; Silicon; Threshold voltage; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location
Montreux, Switzerland
Print_ISBN
0444890661
Type
conf
Filename
5435343
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