DocumentCode :
1909051
Title :
Process window study of the stacked via structure in dual-damascene process
Author :
Saitoh, Takaki ; Wada, Hideyuki ; Kitamura, Kohji
Author_Institution :
Dept. of Semicond. Oper., IBM Japan Ltd., Shiga, Japan
fYear :
1997
fDate :
6-8 Oct 1997
Abstract :
The stacked via structure in dual-damascene process is one of the best ways to shrink the chip size and minimize the process steps for the cost reduction. In this report, the photolithography process window of the stacked via structure is examined using positive resist with the dye by i-line stepper. The reverse damascene process is developed for achieving enough photolithography process window
Keywords :
VLSI; application specific integrated circuits; photoresists; chip size; cost reduction; dual-damascene process; i-line stepper; photolithography process window; positive resist; process steps; reverse damascene process; stacked via structure; Absorption; Application specific integrated circuits; Coatings; Costs; Lithography; Logic; Random access memory; Resists; Shape; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3752-2
Type :
conf
DOI :
10.1109/ISSM.1997.664603
Filename :
664603
Link To Document :
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