Title :
A comparative study of three designs of 0.10 um NMOSFETs processed with heavy ion implanted pocket
Author :
Guegan, G. ; Deleonibus, S. ; Tedesco, S. ; Dal´zotto, B. ; Heitzmann, M. ; Roussin, J.C. ; Martin, F. ; Caillat, C.
Author_Institution :
LETI/CEA, Grenoble, France
fDate :
22-24 September 1997
Keywords :
Boron; CMOS process; Diodes; Doping profiles; Gallium compounds; Indium; Ion implantation; Leakage current; MOSFET circuits; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194411
