Title :
Self-Aligned AlGaAs/GaAs HBT´s with Tungsten N and P Type Ohmic Contacts
Author :
Launay, P. ; Bamueni, B. ; Duchenois, A.M. ; Blanconnier, R.
Author_Institution :
Centre National d´´Etude des Télécommunications, Laboratoire de bagneux, 196 av. Henri Ravera, 92220 BAGNEUX
Abstract :
A self-aligned GaAlAs/GaAs HBT technology with tungsten emitter and base ohmic contacts is presented. The HBT´s layers are grown by MBE, the emitter contact layer is Ga0.35In0.65As. A Zinc diffusion allows for contacting the extrinsic base layer. Self-alignment is obtained by the diffusion around the emitter mesa; nitride spacers are used to isolate the intrinsic area during the diffusion process.
Keywords :
Conductivity; Diffusion processes; Etching; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Ohmic contacts; Plasma temperature; Tungsten; Zinc;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
