• DocumentCode
    1909157
  • Title

    Self-Aligned AlGaAs/GaAs HBT´s with Tungsten N and P Type Ohmic Contacts

  • Author

    Launay, P. ; Bamueni, B. ; Duchenois, A.M. ; Blanconnier, R.

  • Author_Institution
    Centre National d´´Etude des Télécommunications, Laboratoire de bagneux, 196 av. Henri Ravera, 92220 BAGNEUX
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    161
  • Lastpage
    164
  • Abstract
    A self-aligned GaAlAs/GaAs HBT technology with tungsten emitter and base ohmic contacts is presented. The HBT´s layers are grown by MBE, the emitter contact layer is Ga0.35In0.65As. A Zinc diffusion allows for contacting the extrinsic base layer. Self-alignment is obtained by the diffusion around the emitter mesa; nitride spacers are used to isolate the intrinsic area during the diffusion process.
  • Keywords
    Conductivity; Diffusion processes; Etching; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Ohmic contacts; Plasma temperature; Tungsten; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435349
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1909157