Asymmetric gate oxide Tunnel Field Effect Transistor for improved circuit performance

This work presents the performance evaluation of an asymmetric gate oxide Double Gate Tunnel Field Effect Transistor (DG-TFET) based on the concept of Heterogeneous Dielectric with a high-k material at the source side and low-k at the drain end. But, in order to improve the performance further, the low-k oxide material (SiO₂) at the drain end is replaced with air (k=1) to alleviate the problem of high gate drain capacitance, thus providing improved cut-off frequency, circuit performance in terms of inverter propagation delay and suppressed ambipolar behavior.