Title :
Optimisation of Ultra High Density MOS Arrays in 3Ds
Author :
Haneder, T. ; Bertagnolli, E. ; Philipsborn, H.v. ; Krautschneider, W. ; Hofmann, F. ; Willer, J. ; Boehm, T.
Author_Institution :
University of Regensburg, Germany
fDate :
22-24 September 1997
Keywords :
Annealing; Boron; Costs; Etching; Isolation technology; MOSFET circuits; Semiconductor memory; Silicon; Substrates; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194417
