• DocumentCode
    1909272
  • Title

    Simulation and Experimental Study of Zn Outdiffusion During Epitaxial Growth of a Double Heterostructure Bipolar Transistor Structure

  • Author

    Paraskevopoulos, A. ; Weber, R. ; Harde, P. ; Schroeter-JanBen, H.

  • Author_Institution
    Heinrich-Hertz-Institut fÿr Nachrichtentechnik Berlin GmbH, Einsteinufer 37, D-1000 Berlin 10, Germany
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    149
  • Lastpage
    152
  • Abstract
    A model is developed describing Zn outdiffusion during epitaxial growth of a Double Heterostructure Bipolar Transistor (DHBT) structure. This model is used for the design of the highly p-doped base layer. Experimental results confirm the calculated doping profiles.
  • Keywords
    Bipolar transistors; Doping profiles; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Microelectronics; Semiconductor process modeling; Temperature; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435354
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1909272