Title :
Rapid thermal annealing of metastable and stable Si/Si1-xGex heterojunction bipolar transistors
Author :
Shafi, Z.A. ; Martin, A.S.R. ; Whitehurst, J. ; Ashburn, P. ; Godfrey, D J ; Gibbings, C.J. ; Post, I R C ; Tuppen, C.G. ; Booker, G.R. ; Jones, M.E.
Author_Institution :
Dept. of Electronics & Computer Science, University of Southampton, S09 5NH, ENGLAND
Abstract :
The effect of Rapid Thermal Annealing (RTA) treatment on the base and collector currents of Si/Si1-xGex HBTs is investigated. Whilst the base current is improved by high temperature annealing, probably through annealing out of point defects (reducingE/B depletion region recombination), the collector current is degraded by the out-diffusion of boron from the base, creating parasitic barriers to injection. For some devices, the E/B depletion region recombination is reduced to such an extent that the base current is dominated by neutral base recombination.
Keywords :
Boron; Doping; Heterojunction bipolar transistors; Metastasis; Molecular beam epitaxial growth; Rapid thermal annealing; Rapid thermal processing; Simulated annealing; Temperature distribution; Thermal resistance;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
