Field emission characteristics Si nanostructured films fabricated by pulsed laser deposition

Author

Shimawaki, H. ; Kasamatsu, J. ; Suzuki, Y. ; Mimura, H. ; Yokoo, K.

Author_Institution

Dept. of Electr. & Electron. Eng., Hachinohe Inst. of Technol., Japan

fYear

2003

fDate

7-11 July 2003

Firstpage

181

Lastpage

182

Abstract

In this paper, The Si nanostructured films were deposited by the pulsed Nd:YAG laser ( the fourth harmonic, /spl lambda/=266 nm) ablation technique using an oscillating Si target. The emission characteristics were measured in a diode configuration with an external Al anode placed at 9 /spl mu/m above the tips in a vacuum of 10/sup -5/ Pa. The experimental results suggest that the Si nanostructured film with many nanoprotrusions is one of the most promising cathodes for low threshold voltage and stable emission current.

Keywords

electron field emission; elemental semiconductors; nanostructured materials; pulsed laser deposition; semiconductor thin films; silicon; 10/sup -5/ Pa; 266 nm; Al anode; Si; Si nanostructured films; cathodes; diode configuration; field emission properties; pulsed laser deposition; stable emission current; threshold voltage; Anodes; Cathodes; Field emitter arrays; Laser ablation; Optical pulses; Pulsed laser deposition; Semiconductor films; Silicon; Substrates; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International

Conference_Location

Osaka, Japan

Print_ISBN

4-8181-9515-4

Type

conf

DOI

10.1109/IVMC.2003.1223043

Filename

1223043