DocumentCode
1909328
Title
Impact of localised charges present in the interfacial layer of the schottky contact in SOI MESFET
Author
Gautam, Rajni ; Saxena, Manoj ; Gupta, R.S. ; Gupta, Mridula
Author_Institution
Dept. of Electron. Sci., Univ. of Delhi, New Delhii, India
fYear
2012
fDate
15-16 March 2012
Firstpage
312
Lastpage
315
Abstract
This paper presents an investigative study of impact of localised charges present in the interfacial layer of Schottky contact on the performance of the SOI MESFET. Change in threshold voltage can be used to extract the density of localised charges present at metal-semiconductor interface in the SOI MESFET.
Keywords
Schottky gate field effect transistors; silicon-on-insulator; SOI MESFET; Schottky contact; density extraction; interfacial layer; localised charges; metal-semiconductor interface; CMOS integrated circuits; CMOS technology; Logic gates; MESFETs; Performance evaluation; Reliability; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems (ICDCS), 2012 International Conference on
Conference_Location
Coimbatore
Print_ISBN
978-1-4577-1545-7
Type
conf
DOI
10.1109/ICDCSyst.2012.6188727
Filename
6188727
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