DocumentCode
1909353
Title
Influence of ambient gases on the HfC-coated Si field emitter arrays
Author
Sato, T. ; Nagao, M. ; Matsukawa, T. ; Kanemaru, S. ; Itoh, J. ; Yamamoto, S.
Author_Institution
Inst. of Appl. Phys., Tsukuba Univ., Japan
fYear
2003
fDate
7-11 July 2003
Firstpage
183
Lastpage
184
Abstract
In this paper, we have measured the emission characteristics of hafnium carbide (HfC) FEAs in argon (Ar) and oxygen (O/sub 2/) gas ambients and compared them to those of Si FEAs.
Keywords
elemental semiconductors; field emitter arrays; hafnium compounds; silicon; Ar; HfC; HfC coated Si field emitter arrays; HfC-Si; O/sub 2/; Si FEA; field emission properties; gases; hafnium carbide; Aging; Argon; Current measurement; Degradation; Electrodes; Field emitter arrays; Gas industry; Gases; Helium; Hybrid fiber coaxial cables;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location
Osaka, Japan
Print_ISBN
4-8181-9515-4
Type
conf
DOI
10.1109/IVMC.2003.1223044
Filename
1223044
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