• DocumentCode
    1909373
  • Title

    Strain relaxation in GeSi layers with uniform and graded composition

  • Author

    Jain, S.C. ; Balk, P. ; Goorsky, M.S. ; Iyer, S.S.

  • Author_Institution
    DIMES, T.U. Delft, P.O. Box 5053, 2600 GB Delft
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    131
  • Lastpage
    134
  • Abstract
    We have calculated inter-dislocation spacing and stain relaxation in stable and metastable strained GexSi1-x epilayers using an improved theory. Epilayers with graded Ge compositions are also considered. Strain relaxation on annealing MBE grown layers is measured and is found to agree with the calculated values.
  • Keywords
    Annealing; Capacitive sensors; Elasticity; Germanium silicon alloys; Metastasis; Microelectronics; Plastics; Silicon germanium; Strain measurement; Tensile strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435358
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1909373