Title :
Aluminium free active region 780nm tapered semiconductor optical amplifiers for Rubidium pumping
Author :
Jammot, A. ; Lobe, J.B.M. ; Lamponi, Marco ; Robert, Yannick ; Vinet, Eric ; Lecomte, M. ; Garcia, M.A. ; Parillaud, O. ; Krakowski, M.
Author_Institution :
III-V Lab., Alcatel-Thales, Palaiseau, France
Abstract :
Here we present a new tapered semiconductor optical amplifier (SOA) structure that exhibits more than 600 mW output power at a wavelength of 780 nm.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; optical pumping; rubidium; semiconductor optical amplifiers; GaAsP-GaInP; Rb; aluminium free active region; output power; rubidium pumping; tapered semiconductor optical amplifiers; wavelength 780 nm; Diode lasers; Gain; Optical pumping; Optical reflection; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4799-0593-5
DOI :
10.1109/CLEOE-IQEC.2013.6800735
