DocumentCode :
1909460
Title :
Reexamination of Electron Mobility Dependence on Dopants in GaAs
Author :
Köpf, Ch ; Kaiblinger-Grujin, G. ; Kosina, H. ; Selberherr, S.
Author_Institution :
TU Vienna, Austria
fYear :
1997
fDate :
22-24 September 1997
Firstpage :
304
Lastpage :
307
Keywords :
Charge carrier processes; Electron mobility; Fourier transforms; Gallium arsenide; Impurities; Ionization; Microelectronics; Monte Carlo methods; Scattering; Semiconductor process modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194426
Filename :
1503356
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1909460
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