• DocumentCode
    1909529
  • Title

    Two DEG-base GaSb/InAs Hot Electron Transistors

  • Author

    Kawai, H. ; Funato, K. ; Taira, K. ; Nakamura, F.

  • Author_Institution
    Sony Corporation Research Center, 174 Fujistuka-cho, Hodogya-ku, Yokohama 240, Japan.
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    95
  • Lastpage
    98
  • Abstract
    GaSb/InAs/GaSb hot electron transistors with a base thickness of 3 to 20 nm grown by MOCVD operated with a current gain above 8 at room temperature with a low current density (about 100 A cm-2). The carrier density in the InAs base increased more than one order and mobility more than twice that of the single layer InAs of 4×1016 cm-3 and 8900 cm2/Vs, due to accumulation of 2-DEG or the semiconductor-to-semimetal transition in real space at the GaSb/InAs heterojunction.
  • Keywords
    Charge carrier density; Contact resistance; Current density; Electrical resistance measurement; Electrons; Etching; Fabrication; MOCVD; Microelectronics; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435363
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1909529