Title :
1 Watt from 1.56 μm single frequency semiconductor disk laser
Author :
Rantamaki, Antti ; Rautiainen, Jussi ; Sirbu, A. ; Mereuta, A. ; Kapon, Eli ; Okhotnikov, Oleg G.
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland
Abstract :
The potential for power scaling and wavelength scalability of semiconductor disk lasers (SDLs) makes them attractive for high-power single-frequency operation with numerous applications. In particular, single-frequency operation at 1.55 μm has been demonstrated with a monolithically grown InP-based SDL with 170 mW of output power at room temperature [1].
Keywords :
III-V semiconductors; indium compounds; laser beams; semiconductor lasers; wide band gap semiconductors; InP; high-power single-frequency operation; monolithically grown InP-based SDL; power 1 W; power 170 mW; power scaling; single frequency semiconductor disk laser; temperature 293 K to 298 K; wavelength 1.56 mum; wavelength scalability; Delays; Laser theory; Optimized production technology; Power generation; Power lasers; Pump lasers; Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4799-0593-5
DOI :
10.1109/CLEOE-IQEC.2013.6800739
