DocumentCode
1909585
Title
A New Method for Verification of MOSFET Models Based on Device Parameter Variations
Author
Kühn, C. ; Weber, W.
Author_Institution
Institute of Electronics, Universit¨at der Bundeswehr, Germany
fYear
1997
fDate
22-24 September 1997
Firstpage
324
Lastpage
327
Keywords
Capacitance; Doping profiles; Fluctuations; Gaussian distribution; Implants; MOS devices; MOSFET circuits; Measurement standards; Medical simulation; Semiconductor impurities;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN
2-86332-221-4
Type
conf
DOI
10.1109/ESSDERC.1997.194431
Filename
1503361
Link To Document