Rapid extraction of capacitance in a-Si imaging arrays

We present a new technique for computation of charge density for a multi-conductor system embedded in homogeneous or multiple dielectric media. The charge density distribution determines the parasitic coupling capacitance in large-area imaging arrays or ULSI interconnects, as well as the electrostatic interaction in MEMS. The proposed scheme employs the exponential-expansion-based method for efficient evaluation of the three-dimensional potential and electric field. Here, the memory requirement is independent of the desired degree of accuracy, which is an important feature for large-scale simulation involving panel numbers in the range of a few hundred thousand or several million