DocumentCode
1909606
Title
A new numerical method for determining the excess noise power spectrum in MOSFETs
Author
Gatti, E. ; Longoni, A. ; Geronimo, G. De ; Geraci, A.
Author_Institution
Politecnico di Milano, Italy
fYear
1997
fDate
22-24 September 1997
Firstpage
328
Lastpage
331
Keywords
Electron traps; Electrostatics; Equations; Frequency; Low-frequency noise; MOSFETs; Performance evaluation; Semiconductor device noise; Semiconductor devices; Telegraphy;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN
2-86332-221-4
Type
conf
DOI
10.1109/ESSDERC.1997.194432
Filename
1503362
Link To Document