DocumentCode :
1909649
Title :
Determination of interface state density of ULSI n-MOSFET by 1/f noise measurements
Author :
Villa, S. ; Geronimo, G. De ; Pacelli, A. ; Lacaita, A.L. ; Longoni
Author_Institution :
Politecnico di Milano, Italy
fYear :
1997
fDate :
22-24 September 1997
Firstpage :
332
Lastpage :
335
Keywords :
Attenuation measurement; Density measurement; Electron traps; Fluctuations; Interface states; Length measurement; MOSFET circuits; Noise measurement; Tellurium; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194433
Filename :
1503363
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1909649
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