• DocumentCode
    1909649
  • Title

    Determination of interface state density of ULSI n-MOSFET by 1/f noise measurements

  • Author

    Villa, S. ; Geronimo, G. De ; Pacelli, A. ; Lacaita, A.L. ; Longoni

  • Author_Institution
    Politecnico di Milano, Italy
  • fYear
    1997
  • fDate
    22-24 September 1997
  • Firstpage
    332
  • Lastpage
    335
  • Keywords
    Attenuation measurement; Density measurement; Electron traps; Fluctuations; Interface states; Length measurement; MOSFET circuits; Noise measurement; Tellurium; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194433
  • Filename
    1503363
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1909649