Title :
Reliable prediction of deep sub-quarter micron CMOS technology performance
Author :
Palankovski, V. ; Belova, N. ; Grasser, T. ; Puchner, H. ; Aronowitz, S. ; Selberherr, S.
Author_Institution :
Inst. fur Microelectron., Technische Univ. Wien, Austria
Abstract :
We present a novel methodology for characterization of sub-quartermicron CMOS technologies. It involves process calibration, device calibration employing two-dimensional device simulation and automated Technology Computer Aided Design (TCAD) optimization, and, finally, transient mixed-mode device/circuit simulation. The proposed methodology was tested on 0.25 μm technology and applied to 0.13 μm technology in order to estimate ring oscillator speed. The simulation results show an excellent agreement with available experimental data
Keywords :
CMOS integrated circuits; calibration; integrated circuit modelling; integrated circuit reliability; mixed analogue-digital integrated circuits; technology CAD (electronics); 0.13 micron; 0.25 micron; TCAD optimization; automated Technology Computer Aided Design optimization; deep sub-quarter micron CMOS technology performance; device calibration; methodology; process calibration; reliable prediction; ring oscillator speed; sub-quartermicron CMOS technologies; transient mixed-mode device/circuit simulation; two-dimensional device simulation; CMOS technology; Calibration; Circuit simulation; Computational modeling; Computer simulation; Implants; Large scale integration; Logic devices; Medical simulation; Optimized production technology;
Conference_Titel :
Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-7215-8
DOI :
10.1109/NANO.2001.966419
