Title :
The effect of bias voltage on the measurement of local barrier height
Author :
Yoshitake, M. ; Yagyu, S.
Author_Institution :
Nat. Inst. for Mater. Sci., Tsukuba, Japan
Abstract :
In this paper a relation among tunnel current, bias voltage and tip-specimen separation is examined based on Simmons´ formula under constant LBH assumption. It has the been shown that to understand the effect of bias voltage on LBH, measurement has to be carried out under constant tip-specimen separation, not under constant tunnel current as normally used. Measuring local barrier height with STM is a very powerful way of investigating surface potential of nano- or atomic structure.
Keywords :
nanostructured materials; scanning tunnelling microscopy; surface potential; tunnelling; work function; STM; Simmons formula; atomic structure; barrier height measurement; bias voltage; nanostructure; surface potential; tunnel current; Atomic measurements; Current measurement; Equations; Materials science and technology; Microscopy; Nanoscale devices; Nanostructures; Voltage measurement;
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
DOI :
10.1109/IVMC.2003.1223056
