DocumentCode
1909709
Title
Hot carrier effect in sub-0.1um SOI-MOSFETs
Author
Balestra, F.
fYear
1997
fDate
22-24 September 1997
Firstpage
344
Lastpage
347
Keywords
Diodes; Doping profiles; Fluctuations; Geometry; Germanium silicon alloys; Heterojunctions; Hot carrier effects; Low-frequency noise; Silicon germanium; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN
2-86332-221-4
Type
conf
DOI
10.1109/ESSDERC.1997.194436
Filename
1503366
Link To Document