• DocumentCode
    1909716
  • Title

    Construction of probe-based data storage with ultra-high areal density

  • Author

    Shin, Hyunjung ; Up Jeon, Jong ; Hong, Seungum ; Joon Choi, Jae ; Moon Jeong, Hee ; Ki Min, Dong ; Yong Il Kim ; Soo Lee, Chang ; Lee, Sukhan

  • Author_Institution
    Storage Lab., Samsung Adv. Inst. of Technol., Suwon, South Korea
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    207
  • Lastpage
    212
  • Abstract
    Our probe-based data storage (PDS) system consists of four parts: signal processing module, multi-probe array, xy-planar actuator, and recording media. The signal-processing module has 2 layers attached to each other. The first layer has 3 D wiring, and it is assembled to the second layer (ASIC module) for the signal processing circuit. The multi-probe array is designed to increase recording and reading speed of the data bits. Each probe has cantilever and tip that are characterized by a tip height of 15 μm, a tip radius of 15 nm, a natural frequency of 18.75 kHz and a DC sensitivity of 16.7 nm/V. Poly-silicon probe was fabricated by molding technique to produce high aspect ratio tips. The electrostatic planar actuator serves as a scanner that positions the probe to the right place by moving the media in xy-plane. The moving distance was ±40 μm at 10±10 V, DC gain was 3.04 μm/V at 4 V, and the resonance frequency was 143 Hz. The: recording media stores the recorded information in the form of electric polarization in ferroelectric materials. Ferroelectric Pb(Zr,Ti)O3 thin film is a candidate material for the media, and it can yield a memory density as high as 400 Gb/in2 by recording bits as small as 35 nm in diameter. The bits are fully rewritable and retain the information for a generation at the temperature range below than 50 °C
  • Keywords
    arrays; dielectric polarisation; electrostatic actuators; ferroelectric storage; lead compounds; signal processing equipment; 10 V; 15 micron; 15 nm; 18.75 kHz; 35 nm; 3D wiring; 4 V; 50 C; ASIC module; DC sensitivity; PZT; Pb(Zr,Ti)O3; PbZrO3TiO3; Si; cantilever; electric polarization; electrostatic planar actuator; ferroelectric materials; ferroelectric thin film; high aspect ratio tips; memory density; molding technique; multi-probe array; poly-silicon probe; probe-based data storage; probe-based data storage system; reading speed; recording media; recording speed; second layer; signal processing module; tip; ultra-high areal density; xy-planar actuator; Actuators; Application specific integrated circuits; Array signal processing; Assembly; Electrostatics; Ferroelectric materials; Frequency; Memory; Probes; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on
  • Conference_Location
    Maui, HI
  • Print_ISBN
    0-7803-7215-8
  • Type

    conf

  • DOI
    10.1109/NANO.2001.966420
  • Filename
    966420