• DocumentCode
    1909722
  • Title

    Characterization of the Ionizing Radiation Sensitivity of a CCD Technology

  • Author

    Simone, A. ; Debusschere, I. ; Alaerts, A. ; Claeys, C.

  • Author_Institution
    IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    609
  • Lastpage
    612
  • Abstract
    The radiation hardness of a Charge Coupled Device (CCD) technology was characterized with respect to ionizing irradiation. Image sensors and their associated drop-in structures were exposed to ¿-rays up to a total dose of 90 krad(Si). In this paper results on CCD´s and test structures are presented and the degradation phenomena are discussed.
  • Keywords
    Annealing; Charge coupled devices; Current measurement; Dark current; Image sensors; Ionizing radiation; Measurement standards; Plasma temperature; Testing; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435370
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1909722