A selective gate recess process utilizing MBE-grown In/sub 0.5/Ga/sub 0.5/P etch-stop layers for GaAs-based FET technologies

Author

Hanson, A.W. ; Danzilio, D. ; Bacher, K. ; Leung, L.

Author_Institution

AMP Inc., Lowell, MA, USA

fYear

1998

fDate

1-4 Nov. 1998

Firstpage

195

Lastpage

197

Abstract

A selective recess process for GaAs-based FETs that utilizes etch-stop layers comprised of In/sub 0.5/Ga/sub 0.5/P is demonstrated. The material was grown by molecular beam epitaxy (MBE). This approach is shown to provide a suitable degree of selectivity over GaAs (150:1) for conventional recess chemistries. Additionally, insertion of a 20 /spl Aring/ stop-layer does not adversely effect the electrical performance of devices as previously reported approaches based on AlAs stop-layers have. Values of maximum open channel current (I/sub MAX/) transconductance (g/sub m/), pinchoff voltage (V/sub p/) and access resistance for devices containing In/sub 0.5/Ga/sub 0.5/P stop-layers compare well with nominal process values.

Keywords

field effect transistors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; FET technologies; In/sub 0.5/Ga/sub 0.5/P-GaAs; MBE-grown etch stop layers; access resistance; electrical performance; maximum open channel current; pinchoff voltage; selective gate recess process; transconductance; Chemistry; Contact resistance; Degradation; Epitaxial growth; Etching; FETs; Gallium arsenide; Molecular beam epitaxial growth; Reproducibility of results; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual

Conference_Location

Atlanta, GA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5049-9

Type

conf

DOI

10.1109/GAAS.1998.722668

Filename

722668