• DocumentCode
    1909767
  • Title

    Low-Noise Amplifier for Mobile Communications using a Production Ready SiGe HBT Technology

  • Author

    Erben, U. ; Schüppen, A. ; Dietrich, H. ; Schumacher, H.

  • Author_Institution
    University of Ulm, Germany
  • fYear
    1997
  • fDate
    22-24 September 1997
  • Firstpage
    352
  • Lastpage
    355
  • Keywords
    Bonding; Circuit noise; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Mobile communication; Production; Silicon germanium; Working environment noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194438
  • Filename
    1503368
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1909767