Title :
Improvement of high resistivity substrate for future mixed analog-digital applications
Author :
Ohguro, T. ; Kojima, K. ; Momose, H.S. ; Nitta, S. ; Fukuda, T. ; Enda, T. ; Toyoshima, Y.
Author_Institution :
Semicond. Co., Toshiba Corp., Yokohama, Japan
Abstract :
Fully oxygen precipitated (FOP) wafers can suppress slip generation during the STI process and maintain high substrate resistivity. Additional boron implantation can suppress the leakage current between the adjacent wells due to shallow Xj. No effect on MOSFET characteristics by this implantation was observed. The high resistivity substrate (HRS) can provide good ESD performance and suppress the passage of high frequency signals through the substrate in resistors. Thus, HRS with FOP & additional implantation is effective for future mixed signal CMOS with RF circuits.
Keywords :
CMOS integrated circuits; MOSFET; electrostatic discharge; integrated circuit noise; ion implantation; isolation technology; leakage currents; mixed analogue-digital integrated circuits; substrates; B implantation; ESD performance; MOSFET characteristics; RF circuits; STI process; Si:O; high Q inductors; high frequency signal passage suppression; high resistivity substrate; leakage current suppression; mixed analog-digital applications; mixed signal CMOS; substrate noise suppression; Analog-digital conversion; CMOS process; Conductivity; Electrostatic discharge; Fabrication; Inductors; Leakage current; Resistors; Semiconductor device noise; Substrates;
Conference_Titel :
VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-7312-X
DOI :
10.1109/VLSIT.2002.1015432
