A porous Si based novel isolation technology for mixed-signal integrated circuits

Author

Han-Su Kim ; Kyuchul Chong ; Ya-Hong Xie ; DeVincentis, M. ; Itoh, T. ; Becker, A.J. ; Jenkins, K.A.

Author_Institution

Dept. of Mater. Sci. & Eng., California Univ., Los Angeles, CA, USA

fYear

2002

fDate

11-13 June 2002

Firstpage

160

Lastpage

161

Abstract

A novel isolation technology for RF applications based on semi-insulating porous Si (PS) is demonstrated. RF cross-talk isolation of 70 dB at 2 GHz and -45 dB at 8 GHz has been demonstrated using PS trenches that provide complete isolation between neighboring regions of a p/sup +/ Si chip. On-chip spiral inductors of 6 nH fabricated over the PS regions have been demonstrated with Q/sub max/ /spl sim/29 at 7 GHz and a resonant frequency of over 20 GHz.

Keywords

CMOS integrated circuits; elemental semiconductors; inductors; isolation technology; microwave integrated circuits; mixed analogue-digital integrated circuits; porous semiconductors; silicon; 2 GHz; 20 GHz; 7 GHz; 8 GHz; CMOS industry; RF applications; RF cross-talk isolation; Si; complete isolation; mixed-signal integrated circuits; on-chip spiral inductors; p/sup +/ Si chip; porous Si based isolation technology; resonant frequency; semi-insulating porous Si; Circuit noise; Crosstalk; Inductors; Isolation technology; Mixed analog digital integrated circuits; Noise generators; Radio frequency; Semiconductor device noise; Spirals; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-7312-X

Type

conf

DOI

10.1109/VLSIT.2002.1015433

Filename

1015433