Title :
A 9 GHz Bandwith Preamplifier in 10 Gbps Optical Receiver Using SiGe Base HBT
Author :
Ryum, B.R. ; Cho, D.H. ; Lee, S.-M. ; Han, T.-H.
Author_Institution :
Electronics and Telecom. Research Institute, Korea
fDate :
22-24 September 1997
Keywords :
Cutoff frequency; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Molecular beam epitaxial growth; Optical receivers; Preamplifiers; Resistors; Silicon germanium;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194439
