A 1.4 dB insertion-loss, 5 GHz transmit/receive switch utilizing novel depletion-layer-extended transistors (DETs) in 0.18 /spl mu/m CMOS process

Author

Ohnakado, T. ; Furukawa, A. ; Ono, M. ; Taniguchi, E. ; Yamakawa, S. ; Nishikawa, K. ; Murakami, T. ; Hashizume, Y. ; Sugahara, K. ; Oomori, T.

Author_Institution

Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo, Japan

fYear

2002

fDate

11-13 June 2002

Firstpage

162

Lastpage

163

Abstract

A novel depletion-layer-extended transistor (DET) for the RF switch circuit is proposed in a CMOS process, which significantly reduces junction capacitance and increases GND-path resistance in the Si-substrate, with new impurity profiling. This transistor can be simultaneously formed with the conventional transistor with the addition of only one mask-step. By utilizing the DETs, a low 1.4 dB insertion-loss, 5 GHz transmit/receive switch in a 0.18 /spl mu/m CMOS process is realized.

Keywords

CMOS integrated circuits; capacitance; electric resistance; field effect MMIC; impurity distribution; losses; masks; microwave switches; semiconductor switches; 0.18 micron; 1.4 dB; 5 GHz; CMOS process; DET; GND-path resistance; RF switch circuit; Si; Si-substrate; depletion-layer-extended transistors; impurity profiling; insertion-loss; junction capacitance; transistor mask step; transmit/receive switch; CMOS process; CMOS technology; Capacitance; Fabrication; Impurities; Radio frequency; Research and development; Switches; Switching circuits; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-7312-X

Type

conf

DOI

10.1109/VLSIT.2002.1015434

Filename

1015434