Title :
A Defect-Limited Noise Model for a Charge-Coupled Device Pixel
Author :
McGrath, R.D. ; Clark, S.F. ; Duane, P.K. ; Haque-Ahmed, S.
Author_Institution :
Polaroid Corporation, 21 Osborn Street, Cambridge, MA 02139, USA
Abstract :
The performance of charge-coupled device imagers at low light levels is limited by the dark current from interface states and bulk defects that act as generation sites. A model is proposed that links the capture cross-section and concentration of dominant defects with device simulation to understand the temporal and fixed-pattern noise in a pixel.
Keywords :
Dark current; Electron traps; Noise generators; Noise level; Pixel; Random number generation; Signal generators; Solid modeling; Temperature dependence; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
