DocumentCode
1909865
Title
Effect of γ-radiation on the conduction mechanism of thermal vacuum deposited copper phthalocyanine thin films
Author
Arshak, A. ; Zleetni, S.M. ; Arshak, K. ; Harris, J.
Author_Institution
Limerick Univ., Ireland
fYear
2001
fDate
2001
Firstpage
238
Lastpage
242
Abstract
The dosimetry properties of thermally evaporated Copper Phthalocyanine (CuPc) thin films were investigated. The conduction mechanism of the as-deposited films was found to be space-charge-limited and their relative permittivity was within the range reported by others. The Poole-Frenkel effect became more dominant for the irradiated samples and they displayed large increase in permittivity and colour centre density, although the energies of their optical band gap and trapping levels did not change. The observed linear relationship between the absorbance at 615 nm and the γ-radiation doses validated the use of CuPc as an optical sensor dosimeter especially for low radiation doses. Samples showed a higher radiation tolerance after being annealed for one hour at a temperature of only 323 K. Annealing also restored their initial electrical and optical properties
Keywords
Poole-Frenkel effect; annealing; colour centres; copper compounds; defect absorption spectra; dosimetry; gamma-ray detection; gamma-ray effects; optical constants; optical sensors; organic semiconductors; permittivity; semiconductor thin films; space-charge-limited conduction; vacuum deposited coatings; wide band gap semiconductors; γ-radiation; 323 K; 615 nm; Poole-Frenkel effect; absorbance; annealing; colour centre density; copper phthalocyanine thin film; electrical properties; optical band gap; optical properties; optical sensor; permittivity; radiation dosimetry; space-charge-limited conduction; thermal evaporation; trapping levels; vacuum deposition; Annealing; Conductive films; Copper; Dosimetry; Optical films; Optical sensors; Permittivity; Photonic band gap; Thermal conductivity; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on
Conference_Location
Maui, HI
Print_ISBN
0-7803-7215-8
Type
conf
DOI
10.1109/NANO.2001.966426
Filename
966426
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