• DocumentCode
    1909869
  • Title

    A 3Ã\x973 infrared matrix sensor using PVDF on silicon

  • Author

    Hammes, P.C.A. ; Regtien, P.P.L.

  • Author_Institution
    Delft University of Technology, Department of Electrical Engineering, Lab. for Electronic Instrumentation, Mekelweg 4, 2628 CD Delft, The Netherlands.
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    635
  • Lastpage
    638
  • Abstract
    The design and realisation of a 3×3 infrared matrix sensor, using PVDF, is described. The theoretical frequency response and noise behaviour of the sensor are experimentally verified. A good agreement is found between theory and measurements.
  • Keywords
    Capacitance; Frequency; Infrared detectors; Infrared sensors; Low-frequency noise; MOSFET circuits; Sensor phenomena and characterization; Silicon; Thermal resistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435375
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1909869