Title :
Suppression of the Reverse Short Channel Effect in (Sub-)0.25um nMOSFETs using elevated S/D structures
Author :
Schumann, D. ; Krieg, R. ; Fer, H. Sch ; Schwalke, U.
Author_Institution :
Siemens AG, Germany
fDate :
22-24 September 1997
Keywords :
Analog circuits; Annealing; CMOS process; Doping; Epitaxial growth; MOSFET circuits; Research and development; Seals; Silicidation; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194441
